Acta Electronica Malaysia (AEM)

Recent breakthroughs in semiconductor crystal growth are fundamentally transforming next-generation solar optoelectronic devices. Controlled synthesis of high-quality III-V semiconductors, 2D materials, and hybrid perovskites now enables precise tuning of band gap, charge carrier mobility, and light-matter interactions. Innovations such as chemical vapor transport (CVT) for large-area SnS₂ (2.15 eV bandgap) and strain-minimized organic-inorganic interfaces directly address the longstanding challenges of structural defects and scalability. Perovskite crystal engineering, for example, achieves high carrier mobility and solution-processability, which are essential for flexible solar cells. Integration with silicon platforms is advancing through lattice mismatch mitigation using buffer layers and post-growth annealing, ensuring high-quality epitaxial layers. Enhanced crystallinity in organic semiconductors, achieved via van der Waals growth, reduces interfacial defects and improves charge transport in hybrid systems. Scalable production methods, such as iodine-mediated CVT, are accelerating the transition to cost-effective, large-area optoelectronic devices. By bridging material innovation and manufacturing-readiness, this review demonstrates how crystal growth advances are enabling high-efficiency photovoltaics, LEDs, and photo detectors for future energy and communication systems.