Acta Electronica Malaysia (AEM)

We analyzed possibility to increase density of field-effect heterotransistors framework an injection locked oscillator. We obtain, that to increase the density of the considered transistors one shall manufacture them in a heterostructure with specific configuration (substrate and epitaxial layer with sections, which were manufactured by using other materials). These sections should be doped by using ion implantation or dopant diffusion. After the doping optimized annealing of dopant and/or radiation defects should done. To formulate recommendations for the optimization we model mass transport (with account nonlinearity) with time and space varying parameters. To make the modelling we introduce an analytical approach. The approach gives a possibility to make the above modelling without crosslinking of solution on interfaces of the heterostructure.